Samsung Electronics reached an 80% yield for High Bandwidth Memory 4 (HBM4) on August 10, 2026. This milestone marks a sharp increase from the sub-60% yield recorded when mass production began in February. The company achieved its year-end production target ahead of schedule.
Advancements in the thermal compression non-conductive film (TC-NCF) process drove the accelerated progress. Enhanced yields for the underlying 1c DRAM also supported the breakthrough.
Samsung expects HBM4 revenue to rise significantly starting in the third quarter. The company projects HBM4 will constitute over 60% of its total HBM sales in the second half of 2026. This development strengthens Samsung’s position in the AI accelerator market and secures supply for major customers like NVIDIA.